Our research is mostly focused on the wide-bandgap semiconductor silicon carbide (SiC), which is promising to make power electronics smaller, cheaper and more efficient. We work on the full spectrum of topics concerning this semiconductor, from material characteristics via fabrication and device optimization all the way to the packages and reliability studies necessary to successfully use SiC in optimized converters.
Besides SiC, we also work on optimizing current silicon devices and are looking forward to new materials.